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    DSEP12-12B 250 500 750 1000 1250 1500 0 100 [ns] 200 300 400 500 IF =30A 1 10 100 1000 10000 0.0 0.4 0.8 1.2 1.6 2.0 t[ms] 0 200 400 600 800 1000 1200 0 20 VFR [V] 40 60 80 100 0 100 200 300tf [ns] 400 500 VFR 250 500 750 1000 1250 1500 0 10 20 30 40 50 60 250 500 750 1000 1250 1500 0.0 0.1 0.2 0.3 0.4 01234 0 5 10 [A] 15 F 20 25 30 35 40 IRM [A] QR [μC] I VF [V] trr ZthJC [K/W] -diF/dt [A/ms] 250 500 750 1000 1250 1500 0 400 800 1200 1600 2000 0 40 80 120 160 0.0 0.4 KF 0.8 1.2 1.6 TVJ [°C] -diF/dt [A/ms] -diF/d -diF/dt [A/ms] t [A/ms] Erec [μJ] -diF/dt [A/ms] tfr 15 A 7.5 A 15 A Fig. 1 Forward current IF versus VF Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt Fig. 3 Typ. peak reverse current IRM versus -diF/dt Fig. 4 Typ. dynamic parameters Qr,IRM versus TVJ Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt Fig. 8 Transient thermal resistance junction to case Fig. 7 Typ. recovery energy Erec versus -diF/dt Qrr IRM TVJ =25°C 100°C 150°C T = 125°CVJ VR =800V IF =30A 15 A 7.5 A T = 125°CVJ VR =800V IF =30A 7.5 A T = 125°CVJ VR =800V T = 125°CVJ IF =15A VR =800V 15 A 7.5 A IF =30A T =125°CVJ VR = 800 V Fast Diode IXYS reserves the right to change limits, conditions and dimensions. 20131029c Data according to IEC 60747and per semiconductor unless otherwise specified ? 2013 IXYS all rights reserved |